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 2SK3879
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV)
2SK3879
Switching Regulator Applications
* * * * Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 640 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 800 800 30 6.5 19.5 80 375 6.5 8 150 -55~150 Unit V V V A W
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC
mJ A mJ C C
2-10S2B
JEITA TOSHIBA
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.56 Unit C/W 2
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 16.1 mH, RG = 25 , IAR = 6.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Handle with care.
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2SK3879
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ID = 3.5 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 640 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3.5 A VDS = 20 V, ID = 3.5 A Min 30 800 2.0 2.5 Typ. 1.35 5.2 1500 25 140 35 Max 10 100 4.0 1.7 pF Unit A V A V V S
10 V VGS 0V 50 RL= 114 VDD 400 V - VOUT

ns


Turn-on time Switching time Fall time
ton
80
tf
50

nC
Duty 1%, tw = 10 s 220 35 22 13
Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge
toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 6.5 A -

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 6.5 A, VGS = 0 V IDR = 6.5 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1200 11.5 Max 6.5 19.5 -1.7 Unit A A V ns C
Marking
K3879
Part No. (or abbreviation code) Lot No. (weekly code) Note 4
Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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2SK3879
5
ID - VDS
COMMON SOURCE Common source Tc = 25C Tc 25C PULSE TEST Pulse test
8,10
6 5.5
10
ID - VDS
COMMON Common SOURCE source Tc = 25C Ta=25 PULSE Pulse TEST
8,10
6
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
4
8
5.75 5.5
test
6
3
5.25
2
5
4
5.25 5
1 VGS=4.5V 0 0 2 4 6 DRAIN-SOURCE VOLTAGE 8 VDS (V) 10
2
VGS=4.5V
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE VDS (V)
16 Common source COMMON SOURCE V DS=20V VDS = 20test Pulse V 12
PULSE TEST
ID - VGS
DRAIN-SOURCE VOLTAGE VDS (V)
20
VDS - VGS
COMMON SOURCE Common source Tc = 25C Ta=25 PULSE TEST
DRAIN CURRENT ID (A)
16
Pulse test
12
ID=7A
8
8
3.5
4
Ta=100 -55 25
4
1.5
0 0 2 4 6 8
(V)
0
10
0
GATE-SOURCE VOLTAGE VGS
4 8 12 16 GATE-SOURCE VOLTAGE VGS (V)
20
100
FORWARD TRANSFER ADMITTANCE Yfs (S)
Yfs - ID
DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
RDS (ON) - ID
10.00 Common source COMMON SOURCE V = =10V VGS GS10 V Tc = 25C Tc=25 PULSE TEST Pulse test
Common source COMMON SOURCE V DS=20V VDS = 20 V Pulse test PULSE TEST 10 -55 Ta=100 1
25
1.00
0.1 0.1 1 10 DRAIN CURRENT ID (A) 100
0.10 0.01 0.1 1 DRAIN CURRENT ID (A) 10
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DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
RDS (ON) - Tc
DRAIN REVERSE CURRENT IDR (A)
10
COMMON source Common SOURCE Tc = 25C Tc=25 PULSE TEST Pulse test
IDR - VDS
4
Common source COMMON SOURCE V = =10V VGS GS10 V PULSE TEST Pulse test 7
3 3 2 ID=1.5A 1
1
3 10 VGS=0-1V 1
0 -80 -40 0 40 80 120 CASE TEMPERATURE Tc (C) 160
0.1 0 -0.2 -0.4 -0.6
-0.8
-1
-1.2
DRAIN-SOURCE VOLTAGE VDS (V)
10000
CAPACITANCE - VDS
Vth (V)
5
Vth - Tc
Ciss
(pF)
4
1000 Coss
GATE THRESHOLD VOLTAGE
CAPACITANCE C
3
2
COMMON SOURCE
100
COMMON SOURCE Common source V =0V VGS = 0 V GS f = 1 MHz f=1MHz Tc = 25C Tc=25
Crss
1
Common source V DS=10V ID = 1 mA ID=1mA PULSE TEST Pulse test
VDS = 10 V
10 0.1 1 10 DRAIN-SOURCE VOLTAGE VDS (V) 100
0 -80 -40 0 40 80 120 CASE TEMPERATURE Tc (C) 160
120
PD (W)
PD - Tc
DRAIN-SOURCE VOLTAGE VDS (V)
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
500 20
100 80 60 40 20 0 0 40 80 120
Tc (C)
VDD=100V 300 200V 400V
COMMON SOURCE Common source
DRAIN POWER DISSIPATION
12
200
8
100
ID=6.5A ID = 6.5 A
Tc=25 Tc = 25C
4
PULSE TEST
Pulse test
0
0 0 20 40 60
160
CASE TEMPERATURE
TOTAL GATE CHARGE Qg (nC)
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GATE-SOURCE VOLTAGE VGS
400
V DS
16
(V)
2SK3879
rth - tw
NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
10 1
duty=0.5 0.1
0.1 0.05
0.02
t =t/ =1.56
0.01
0.01 SINGLE PULSE
0.001 0.00001 0.0001
0.001
0.01
0.1
(S)
1
10
PULSE WIDTH tw
SAFE OPERATING AREA
100
EAS - Tch
400
AVALANCHE ENERGY EAS (mJ)
I MAX (PULSED) * D ()
100 s *
350 300 250 200 150 100 50 0 25 50 75 100 125
Tch (C)
10
ID MAX (CONTINUOUS) * ()
1 ms*
DRAIN CURRENT ID (A)
1
DC OPERATION Tc = 25
0.1
SINGLE NONREPETITIVE PULSE * SINGLE NONREPETITIVE Tc =PULSE Tc=25 25C Curves be derated linearly with Curves mustmust be detaed lineality with increase in increase in temperature temperature.
1 10 100
150
CHANNEL TEMPERATURE (INITIAL)

0.01 1000
DRAIN-SOURCE VOLTAGE VDS (V)
15 V -15 V
BVDSS IAR VDD VDS
TEST CIRCUIT RG = 25 VDD = 90 V, L = 16.1 mH
WAVE FORM
AS =
1 B VDSS L I2 B 2 VDSS - VDD
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2SK3879
RESTRICTIONS ON PRODUCT USE
* Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. * Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. * Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. * The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.
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